Datasheet PBSS303ND - NXP TRANSISTOR, NPN, 60 V, 3 A, SSOT-6 — Ficha de datos

NXP PBSS303ND

Part Number: PBSS303ND

Descripción detallada

Manufacturer: NXP

Description: TRANSISTOR, NPN, 60 V, 3 A, SSOT-6

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Docket:
PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
Rev.

02 -- 14 December 2007 Product data sheet
1. Product profile
1.1 General description

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 60 V
  • Collector Emitter Voltage Vces: 515 mV
  • Current Ic @ Vce Sat: 6 A
  • Current Ic Continuous a Max: 3 A
  • DC Current Gain Min: 345
  • DC Current Gain: 500 mA
  • Gain Bandwidth ft Typ: 140 MHz
  • Mounting Type: SMD
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SSOT-6
  • Power Dissipation Pd: 1.1 W
  • Power Dissipation Ptot Max: 1.1 W
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SSOT
  • Transistor Polarity: NPN
  • Transistor Type: General Purpose

RoHS: Yes