Datasheet MJD200G - ON Semiconductor TRANSISTOR, RF — Ficha de datos

ON Semiconductor MJD200G

Part Number: MJD200G

Descripción detallada

Manufacturer: ON Semiconductor

Description: TRANSISTOR, RF

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Docket:
MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface Mount Applications
Designed for low voltage, low-power, high-gain audio amplifier applications.
Features http://onsemi.com
· Collector-Emitter Sustaining Voltage -

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 25 V
  • DC Collector Current: 5 A
  • DC Current Gain: 65
  • Gain Bandwidth ft Typ: 65 MHz
  • Number of Pins: 3
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: D-PAK
  • Power Dissipation Pd: 1.4 W
  • SVHC: No SVHC (15-Dec-2010)
  • Transistor Case Style: D-PAK
  • Transistor Polarity: NPN

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 244 08 D PAK
  • Multicomp - MK3306/S