Datasheet MMBTH10LT1G - ON Semiconductor TRANSISTOR, NPN — Ficha de datos

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Manufacturer: ON Semiconductor

Description: TRANSISTOR, NPN

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Docket:
MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc 2 EMITTER
· These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Specifications:

• Collector Emitter Voltage V(br)ceo: 25 V
• Collector Emitter Voltage Vces: 500 mV
• Current Ic Continuous a Max: 4 A
• DC Collector Current: 4 mA
• DC Current Gain Min: 60
• DC Current Gain: 60
• Gain Bandwidth ft Typ: 650 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Package / Case: SOT-23
• Power Dissipation Max: 300 mW
• Power Dissipation: 225 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN

RoHS: Yes