Datasheet ON Semiconductor 2N3906RL1G — Ficha de datos

2N3906
General Purpose
Transistors
PNP Silicon
http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR
3
2
BASE MAXIMUM RATINGS
Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C
Derate above 25°C PD 625
5.0 mW
mW/°C Total Power Dissipation @ TA = 60°C PD 250 mW Total Device Dissipation @ TC = 25°C
Derate above 25°C PD 1.5
12 W
mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction
Temperature Range 1
EMITTER TO−92
CASE 29
STYLE 1
1 12 3
STRAIGHT LEAD
BULK PACK 2 3
BENT LEAD …