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P-Channel Enhancement Mode Vertical Dmos Fet
Extracto del documento
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET ZVP3306A
TYPICAL CHARACTERISTICS
-1.2 VGS=-20V -14V
-0.8 -12V
-10V -0.6 -9V
-8V
-0.4
-7V -6V
-5V -0.2 -4V -14V -10 -20 -30 -40 -0.6 -10V -0.4 -9V
-8V
-7V -0.2 VDS -Drain Source Voltage (Volts) -8
ID=
-6 -400mA -4 -2 -200mA 0 -100mA
0 -2 -4 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) Output Characteristics -4 -6 -8 -10 -7V -10V
-15V 10 -20V -100 -1000 ID-Drain Current (mA) On-resistance vs Drain Current SYMBOL VALUE UNIT Drain-Source Voltage VDS -60 V -160 mA IDM -1.6 A Saturation Characteristics Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VDS=-10V -0.6 -0.4 -0.2 0
0 -2 -4 -6 -8 -10 2.4 VGS=-10V
ID=0.37A 2.2 n)
(o 2.0
1.8
1.6 e
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