Datasheet ZXM61P02F - Diodes MOSFET, P, SOT-23 — Ficha de datos

Diodes ZXM61P02F

Part Number: ZXM61P02F

Descripción detallada

Manufacturer: Diodes

Description: MOSFET, P, SOT-23

Docket:
ZXM61P02F
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=-20V; RDS(ON)=0.60 ; ID=-0.9A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · · · · · · · · · Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package
SOT23

Simulation Model

Specifications:

Continuous Drain Current Id: 900 mA
Current Id Max: 900 mA
Current Temperature: 25°C
Drain Source Voltage Vds: 20 V
Junction Temperature Tj Max: 150°C
Junction Temperature Tj Min: -55°C
Mounting Type: SMD
Number of Pins: 3
Number of Transistors: 1
On Resistance Rds(on): 600 MOhm
On State Resistance Max: 600 MOhm
Package / Case: SOT-23
Power Dissipation Pd: 625 W
Power Dissipation Ptot Max: 625 W
Pulse Current Idm: 4.9 A
Rds(on) Test Voltage Vgs: 4.5 V
SMD Marking: P02
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: -700 mV
Transistor Case Style: SOT-23
Transistor Polarity: P Channel
Voltage Vds Typ: -20 V
Voltage Vgs Max: -700 mV
Voltage Vgs Rds on Measurement: -4.5 V
Voltage Vgs th Min: -0.7 V

RoHS: Yes