Datasheet FDG6303N - Fairchild MOSFET, NN — Ficha de datos

Descripción detallada

Manufacturer: Fairchild

Description: MOSFET, NN

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Docket:
September 2001
FDG6303N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 500 mA
• Drain Source Voltage Vds: 25 V
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 340 MOhm
• Package / Case: SC-70
• Power Dissipation: 300 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 800 mV
• Transistor Case Style: SC-70
• Transistor Polarity: N Channel
• Voltage Vds Typ: 25 V
• Voltage Vgs Max: 800 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes