Datasheet FDV302P - Fairchild MOSFET, P, DIGITAL, SOT-23 — Ficha de datos

Fairchild FDV302P

Part Number: FDV302P

Descripción detallada

Manufacturer: Fairchild

Description: MOSFET, P, DIGITAL, SOT-23

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Docket:
October 1997
FDV302P Digital FET, P-Channel
General Description
This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.
Features

Specifications:

  • Continuous Drain Current Id: 120 mA
  • Current Id Max: 120 mA
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 25 V
  • ESD HBM: 6 kV
  • External Depth: 2.5 mm
  • External Length / Height: 1.12 mm
  • External Width: 3.05 mm
  • Full Power Rating Temperature: 25°C
  • Mounting Type: SMD
  • Number of Pins: 3
  • Number of Transistors: 1
  • On Resistance Rds(on): 13 Ohm
  • Package / Case: SOT-23
  • Power Dissipation Pd: 350 mW
  • Pulse Current Idm: 500 mA
  • Rds(on) Test Voltage Vgs: 2.7 V
  • SMD Marking: 302P
  • SVHC: No SVHC (15-Dec-2010)
  • Tape Width: 8 mm
  • Threshold Voltage Vgs Typ: -1 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: -25 V
  • Voltage Vgs Max: -1 V
  • Voltage Vgs Rds on Measurement: -4.5 V
  • Voltage Vgs th Max: -1.5 V

RoHS: Yes