Datasheet NDB6060L - Fairchild MOSFET, N, D2-PAK — Ficha de datos
Part Number: NDB6060L
Descripción detallada
Manufacturer: Fairchild
Description: MOSFET, N, D2-PAK
Docket:
April 1996
NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
Specifications:
- Alternate Case Style: D2-PAK
- Capacitance Ciss Typ: 1630 pF
- Continuous Drain Current Id: 48 A
- Current Id Max: 48 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 60 V
- Full Power Rating Temperature: 25°C
- Mounting Type: SMD
- Number of Pins: 3
- Number of Transistors: 1
- On Resistance Rds(on): 25 MOhm
- Package / Case: D2-PAK
- Power Dissipation Pd: 100 W
- Pulse Current Idm: 144 A
- Rds(on) Test Voltage Vgs: 5 V
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 2 V
- Transistor Case Style: D2-PAK
- Transistor Polarity: N Channel
- Voltage Vds Typ: 60 V
- Voltage Vgs Max: 2 V
- Voltage Vgs Rds on Measurement: 5 V
- Voltage Vgs th Max: 2 V
- Voltage Vgs th Min: 1 V
RoHS: Y-Ex
Accessories:
- Fischer Elektronik - FK 244 08 D2 PAK
- Fischer Elektronik - FK 244 13 D2 PAK
- Fischer Elektronik - WLK 5