Datasheet HUF75307D3 - Fairchild MOSFET, N I-PAK — Ficha de datos

Descripción detallada

Manufacturer: Fairchild

Description: MOSFET, N I-PAK

Download Data Sheet

Docket:
HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFETTM process.

This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.

Specifications:

• Continuous Drain Current Id: 13 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 55 V
• Full Power Rating Temperature: 25°C
• Lead Length: 9.65 mm
• Lead Spacing: 2.28 mm
• Number of Transistors: 1
• On Resistance Rds(on): 90 MOhm
• Package / Case: TO-251 (I-Pak)
• Power Dissipation Pd: 35 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-251
• Transistor Polarity: N Channel
• Turn Off Time: 45 ns
• Turn On Time: 40 ns