Datasheet BSZ042N04NS G - Infineon MOSFET, N CH, 40 A, 40 V, PG-TSDSON-8 — Ficha de datos

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Manufacturer: Infineon

Description: MOSFET, N CH, 40 A, 40 V, PG-TSDSON-8

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Docket:
BSZ042N04NS G
!"#$%!&TM3 Power-Transistor
Features · Fast switching MOSFET for SMPS · Optimized technology for DC/DC converters · Qualified according to JEDEC1) for target applications · N-channel; Normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance · Avalanche rated · Pb-free plating; RoHS compliant · Halogen-free according to IEC61249-2-21 Type BSZ042N04NS G Package PG-TSDSON-8 Marking 042N04N
Product Summary V DS R DS(on),max ID 40 4.2 40 PG-TSDSON-8 V mW A
Maximum ratings, at T j=25 ° unless otherwise specified C, Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 ° C V GS=10 V, T C=100 ° C Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage

Specifications:

• Current Id Max: 40 A
• Drain Source Voltage Vds: 40 V
• Number of Pins: 8
• On Resistance Rds(on): 3.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 69 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PG-TSDSON
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vgs Max: 20 V

RoHS: Yes