Datasheet IPB025N08N3 G - Infineon MOSFET, N CH, 120 A, 80 V, PG-TO263-3 — Ficha de datos

Infineon IPB025N08N3 G

Part Number: IPB025N08N3 G

Descripción detallada

Manufacturer: Infineon

Description: MOSFET, N CH, 120 A, 80 V, PG-TO263-3

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Docket:
IPB025N08N3 G
"%&$!"# 3 Power-Transistor
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5B < G ? >B 9D 5 R 9H"[Z# I? 5CC 1>3 Q T ? @5B 9 D 1D 5=@5B EB >7 1D 5 Q ) 2 655 < B 514 @< 9 + ? " , 3 ? =@<1>D 1D >7 9 Q * E1<654 13 3 ? B >7 D $ 9 9 49 ?
)#
TM

Specifications:

  • Current Id Max: 120 A
  • Drain Source Voltage Vds: 80 V
  • Number of Pins: 3
  • On Resistance Rds(on): 2 MOhm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 300 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • Transistor Type: Power MOSFET
  • Voltage Vgs Max: 20 V

RoHS: Yes