Datasheet IPB067N08N3 G - Infineon MOSFET, N CH, 80 A, 80 V, PG-TO263-3 — Ficha de datos

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Manufacturer: Infineon

Description: MOSFET, N CH, 80 A, 80 V, PG-TO263-3

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Docket:
IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G
"%&$!"# 3 Power-Transistor
Features Q #451<6 B 78 65AE5>3 I C D89 1>4 C
B
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Specifications:

• Current Id Max: 80 A
• Drain Source Voltage Vds: 80 V
• Number of Pins: 3
• On Resistance Rds(on): 5.5 MOhm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 136 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vgs Max: 20 V

RoHS: Yes