Datasheet SPP20N60CFD - Infineon MOSFET, N, TO-220 — Ficha de datos
Part Number: SPP20N60CFD
Descripción detallada
Manufacturer: Infineon
Description: MOSFET, N, TO-220
Docket:
SPP20N60CFD Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Worldwide best RDS(on) in TO 220 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · High peak current capability · Intrinsic fast-recovery body diode · Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7
PG-TO220
V A
Type SPP20N60CFD Maximum Ratings Parameter
Specifications:
- Continuous Drain Current Id: 20.7 A
- Current Id Max: 20.7 A
- Drain Source Voltage Vds: 650 V
- Mounting Type: Through Hole
- Number of Pins: 3
- On Resistance Rds(on): 220 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-220
- Power Dissipation Pd: 208 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Case Style: TO-220
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vds Typ: 650 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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