Datasheet SPP24N60CFD - Infineon MOSFET, N-CH, 650 V, 21.7 A, TO-220 — Ficha de datos
Part Number: SPP24N60CFD
Descripción detallada
Manufacturer: Infineon
Description: MOSFET, N-CH, 650 V, 21.7 A, TO-220
Docket:
SPP24N60CFD
CoolMOSTM Power Transistor
Features · Intrinsic fast-recovery body diode · Extremely low reverse recovery charge · Ultra low gate charge · Extreme dv /dt rated · High peak current capability · Qualified according to JEDEC1) for target applications
Product Summary V DS @ Tjmax R DS(on),max ID 650 V
0.185 21.7 PG-TO220 A
Specifications:
- Continuous Drain Current Id: 21.7 A
- Drain Source Voltage Vds: 650 V
- Number of Pins: 3
- On Resistance Rds(on): 0.15 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 240 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Case Style: TO-220
- Transistor Polarity: N Channel
- Voltage Vds Typ: 650 V
- RoHS: Yes
- SVHC: No SVHC (19-Dec-2011)