Datasheet IRF6668TR1PBF - International Rectifier MOSFET, N, DIRECTFET, MZ — Ficha de datos
Part Number: IRF6668TR1PBF
Descripción detallada
Manufacturer: International Rectifier
Description: MOSFET, N, DIRECTFET, MZ
Docket:
PD - 97232A
IRF6668PbF IRF6668TRPbF
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RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Specifications:
- Avalanche Single Pulse Energy Eas: 24mJ
- Base Number: 6668
- Cont Current Id @ 70В°C: 44 A
- Continuous Drain Current Id: 55 A
- Current Id Max: 44 A
- Drain Source Voltage Vds: 80 V
- Fall Time tf: 23 ns
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -40°C
- Mounting Type: SMD
- Number of Pins: 5
- On Resistance Rds(on): 15 MOhm
- Package / Case: MZ
- Power Dissipation Pd: 2.8 mW
- Pulse Current Idm: 170 A
- Rds(on) Test Voltage Vgs: 10 V
- Rise Time: 13 ns
- SVHC: No SVHC (15-Dec-2010)
- Storage Temperature Max: 150°C
- Storage Temperature Min: -40°C
- Threshold Voltage Vgs Typ: 4 V
- Transistor Polarity: N Channel
- Voltage Vds Typ: 80 V
- Voltage Vds: 80 V
- Voltage Vgs Max: 4 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes