Datasheet IRF7325PBF - International Rectifier MOSFET, DUAL, PP, LOGIC, SO-8 — Ficha de datos

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Manufacturer: International Rectifier

Description: MOSFET, DUAL, PP, LOGIC, SO-8

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Docket:
PD- 95721
IRF7325PbF
HEXFET® Power MOSFET
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free Description
New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.

Specifications:

• Continuous Drain Current Id: 7.8 A
• Current Id Max: -7.8 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 12 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 24 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 39 A
• Rds(on) Test Voltage Vgs: -4.5 V
• Row Pitch: 6.3 mm
• SMD Marking: IRF7325PBF
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -900 mV
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: -12 V
• Voltage Vgs Max: -900 mV
• Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes

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