Datasheet IRLU014NPBF - International Rectifier MOSFET, N, 55 V, 10 A, I-PAK — Ficha de datos

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Manufacturer: International Rectifier

Description: MOSFET, N, 55 V, 10 A, I-PAK

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Docket:
PD- 94350
IRLR/U014N
HEXFET® Power MOSFET
Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Specifications:

• Alternate Case Style: I-PAK
• Continuous Drain Current Id: 10 A
• Current Id Max: 10 A
• Drain Source Voltage Vds: 55 V
• Junction to Case Thermal Resistance A: 5.3°C/W
• Mounting Type: Through Hole
• Number of Pins: 3
• On Resistance Rds(on): 140 MOhm
• On State resistance @ Vgs = 10V: 140 MOhm
• Package / Case: IPAK
• Power Dissipation Pd: 28 W
• Pulse Current Idm: 40 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: I-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 55 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 1 V

RoHS: Y-Ex

Accessories:

• Fischer Elektronik - FK 244 13 D PAK
• Fischer Elektronik - WLK 5
• Panasonic - EYGA121807A
• Roth Elektronik - RE901