Datasheet IXFN64N60P - IXYS MOSFET, N, SOT-227B — Ficha de datos

IXYS IXFN64N60P

Part Number: IXFN64N60P

Descripción detallada

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 64N60P
VDSS ID25
RDS(on) trr

Specifications:

  • Capacitance Ciss Typ: 12000 pF
  • Continuous Drain Current Id: 64 A
  • Current Id Max: 50 A
  • Drain Source Voltage Vds: 600 V
  • Junction to Case Thermal Resistance A: 0.18°C/W
  • Mounting Type: Screw
  • N-channel Gate Charge: 200nC
  • Number of Pins: 4
  • On State Resistance: 96 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: ISOTOP
  • Power Dissipation Pd: 700 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 200 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: ISOTOP
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA121807A
  • SCHRODER - 20900