Datasheet IXTQ30N60L2 - IXYS MOSFET, N CH, 600 V, 30 A, TO-3P — Ficha de datos

IXYS IXTQ30N60L2

Part Number: IXTQ30N60L2

Descripción detallada

Manufacturer: IXYS

Description: MOSFET, N CH, 600 V, 30 A, TO-3P

data sheetDownload Data Sheet

Docket:
Preliminary Technical Information
Linear L2TM Power MOSFET with extended FBSOA
N-Channel Enhancement Mode Avalanche rated
IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2
VDSS ID25

Specifications:

  • Current Id Max: 30 A
  • Drain Source Voltage Vds: 600 V
  • Number of Pins: 3
  • On State Resistance: 240 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 540 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-3P
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

  • BERGQUIST - 3223-07FR-104NH
  • LAIRD TECHNOLOGIES - THER-T-LARGE
  • Multicomp - MK3305
  • ON Semiconductor - MC33153DG