Datasheet IXTQ88N30P - IXYS MOSFET, N, TO-3P — Ficha de datos

IXYS IXTQ88N30P

Part Number: IXTQ88N30P

Descripción detallada

Manufacturer: IXYS

Description: MOSFET, N, TO-3P

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Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P
VDSS ID25
RDS(on)

Specifications:

  • Capacitance Ciss Typ: 6300 pF
  • Continuous Drain Current Id: 88 A
  • Current Id Max: 88 A
  • Drain Source Voltage Vds: 300 V
  • Junction to Case Thermal Resistance A: 0.21°C/W
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 180nC
  • Number of Pins: 3
  • On State Resistance: 40 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-3P
  • Power Dissipation Pd: 600 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 250 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-3P
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 300 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - WLK 5
  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A