Datasheet IXUC200N055 - IXYS MOSFET, N, ISOPLUS220 — Ficha de datos

IXYS IXUC200N055

Part Number: IXUC200N055

Descripción detallada

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
ADVANCED TECHNICAL INFORMATION
Trench Power MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
IXUC200N055

Specifications:

  • Continuous Drain Current Id: 200 A
  • Drain Source Voltage Vds: 55 V
  • Isolation Voltage: 2.5 kV
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 44nC
  • On State Resistance: 5.1 MOhm
  • Package / Case: ISOPLUS-220
  • Power Dissipation Pd: 300 W
  • Reverse Recovery Time trr Max: 80 ns
  • Rth: 0.5
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: ISOPLUS-220
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 55 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes