Datasheet BSH105,215 - NXP MOSFET, N CH, 20 V, 1.05 A, SOT23 — Ficha de datos

NXP BSH105,215

Part Number: BSH105,215

Descripción detallada

Manufacturer: NXP

Description: MOSFET, N CH, 20 V, 1.05 A, SOT23

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Docket:
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES
· Very low threshold voltage · Fast switching · Logic level compatible · Subminiature surface mount package

Specifications:

  • Continuous Drain Current Id: 600 mA
  • Current Id Max: 1.05 A
  • Drain Source Voltage Vds: 20 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 200 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation: 417 mW
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SVHC: No SVHC (19-Dec-2011)
  • Threshold Voltage Vgs Typ: 570 mV
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 570 mV
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Otros nombres:

BSH105215, BSH105 215