Datasheet BSH111 - NXP MOSFET, N, SOT-23 — Ficha de datos

NXP BSH111

Part Number: BSH111

Descripción detallada

Manufacturer: NXP

Description: MOSFET, N, SOT-23

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Docket:
BSH111
N-channel enhancement mode field-effect transistor
Rev.

02 -- 26 April 2002
M3D088
Product data

Specifications:

  • Continuous Drain Current Id: 335 mA
  • Current Id Max: 335 mA
  • Drain Source Voltage Vds: 55 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 2.3 Ohm
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation: 830 mW
  • Pulse Current Idm: 1.3 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SVHC: No SVHC (19-Dec-2011)
  • Threshold Voltage Vgs Typ: 1 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 55 V
  • Voltage Vgs Max: 10 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Max: 1.3 V

RoHS: Yes