Datasheet BSH205 - NXP MOSFET, P, SOT-23 — Ficha de datos

NXP BSH205

Part Number: BSH205

Descripción detallada

Manufacturer: NXP

Description: MOSFET, P, SOT-23

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Docket:
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
FEATURES
· Very low threshold voltage · Fast switching · Logic level compatible · Subminiature surface mount package

Specifications:

  • Continuous Drain Current Id: 750 mA
  • Current Id Max: -750 mA
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: -12 V
  • External Depth: 2.5 mm
  • External Length / Height: 1.12 mm
  • External Width: 3.05 mm
  • Full Power Rating Temperature: 25°C
  • Mounting Type: SMD
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 500 MOhm
  • On State Resistance: 400 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation Pd: 417 mW
  • Power Dissipation Ptot Max: 417 mW
  • Pulse Current Idm: 3 A
  • Rds(on) Test Voltage Vgs: -4.5 V
  • SVHC: No SVHC (18-Jun-2010)
  • Tape Width: 8 mm
  • Threshold Voltage Vgs Typ: 680 mV
  • Transistor Case Style: SOT-23
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: 12 V
  • Voltage Vgs Max: -8 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th P Channel Min: 0.68 V

RoHS: Yes

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