Datasheet BUK652R1-30C - NXP MOSFET, N CH, 30 V, 120 A, SOT78 — Ficha de datos
Part Number: BUK652R1-30C
Descripción detallada
Manufacturer: NXP
Description: MOSFET, N CH, 30 V, 120 A, SOT78
Docket:
BUK652R1-30C
N-channel TrenchMOS intermediate level FET
Rev.
02 -- 16 December 2010 Product data sheet
1. Product profile
1.1 General description
Specifications:
- Current Id Max: 120 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 3
- On State Resistance: 2020µ Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 263 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOT-78A
- Transistor Polarity: N Channel
- Voltage Vgs Max: 16 V
RoHS: Y-Ex
Accessories:
- AAVID THERMALLOY - 1.25GY-50
- Fairchild - FDMC8200
- Fischer Elektronik - WLK 5
Otros nombres:
BUK652R130C, BUK652R1 30C