Datasheet PHT4NQ10LT,135 - NXP MOSFET N-CH 100 V 3.5 A SOT223 — Ficha de datos

NXP PHT4NQ10LT,135

Part Number: PHT4NQ10LT,135

Descripción detallada

Manufacturer: NXP

Description: MOSFET N-CH 100 V 3.5 A SOT223

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Docket:
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
M3D087
Rev.

01 -- 11 September 2000
Product specification

Specifications:

  • Continuous Drain Current Id: 1.75 A
  • Current Id Max: 3.5 A
  • Drain Source Voltage Vds: 100 V
  • Mounting Type: SMD
  • Number of Pins: 4
  • On State Resistance: 250 MOhm
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-223
  • Power Dissipation Pd: 6.9 W
  • Rds(on) Test Voltage Vgs: 5 V
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 2 V
  • Transistor Case Style: SOT-223
  • Transistor Polarity: N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 130 V
  • Voltage Vgs Max: 2 V
  • Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes

Otros nombres:

PHT4NQ10LT135, PHT4NQ10LT 135