Datasheet PMV31XN - NXP MOSFET, N, SOT-23 — Ficha de datos

NXP PMV31XN

Part Number: PMV31XN

Descripción detallada

Manufacturer: NXP

Description: MOSFET, N, SOT-23

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Docket:
PMV31XN
µTrenchMOSTM extremely low level FET
Rev.

01 -- 26 February 2003 Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PMV31XN in SOT23.

Specifications:

  • Continuous Drain Current Id: 5.9 A
  • Current Id Max: 5.9 A
  • Current Temperature: 25°C
  • Device Marking: PMV31XN
  • Drain Source Voltage Vds: 20 V
  • External Depth: 2.5 mm
  • External Length / Height: 1.12 mm
  • External Width: 3.05 mm
  • Full Power Rating Temperature: 25°C
  • Mounting Type: SMD
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance: 31 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation Pd: 2 W
  • Power Dissipation Ptot Max: 2 W
  • Pulse Current Idm: 23.7 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SVHC: No SVHC (18-Jun-2010)
  • Tape Width: 8 mm
  • Threshold Voltage Vgs Typ: 1.8 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 12 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Max: 1.5 V

RoHS: Yes

Accessories:

  • LICEFA - V11-7
  • Roth Elektronik - RE901