Datasheet PSMN009-100P - NXP MOSFET, N, TO-220 — Ficha de datos

Descripción detallada

Manufacturer: NXP

Description: MOSFET, N, TO-220

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Docket:
PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
Rev.

01 -- 29 April 2002 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in SOT404 (D2-PAK).

Specifications:

• Continuous Drain Current Id: 75 A
• Current Id Max: 75 A
• Drain Source Voltage Vds: 100 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 7.5 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-220AB
• Power Dissipation Pd: 230 W
• Pulse Current Idm: 400 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: PSMN009-100P
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-220AB
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5

Otros nombres:

PSMN009100P, PSMN009 100P