Datasheet BSS123,215 - NXP MOSFET, N CH, 100 V, 150 mA, 3-SOT-23 — Ficha de datos

NXP BSS123,215

Part Number: BSS123,215

Descripción detallada

Manufacturer: NXP

Description: MOSFET, N CH, 100 V, 150 mA, 3-SOT-23

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Docket:
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor Logic level FET
FEATURES
· 'Trench' technology · Extremely fast switching · Logic level compatible · Subminiature surface mounting package

Specifications:

  • Continuous Drain Current Id: 150 mA
  • Drain Source Voltage Vds: 100 V
  • On Resistance Rds(on): 6 Ohm
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2 V
  • Transistor Polarity: N Channel

RoHS: Yes

Otros nombres:

BSS123215, BSS123 215