Datasheet MTB2P50ET4G - ON Semiconductor Transistor — Ficha de datos

Part Number: MTB2P50ET4G

Descripción detallada

Manufacturer: ON Semiconductor

Description: Transistor

Docket:
MTB2P50E
Preferred Device
Power MOSFET 2 Amps, 500 Volts
P-Channel D2PAK
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Specifications:

Transistor Polarity: P Channe

RoHS: Yes