Datasheet RHP020N06T100 - Rohm MOSFET, N, 60 V, 2.5 A — Ficha de datos

Rohm RHP020N06T100

Part Number: RHP020N06T100

Descripción detallada

Manufacturer: Rohm

Description: MOSFET, N, 60 V, 2.5 A

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Docket:
RHP020N06
Transistors
4V Drive Nch MOS FET
RHP020N06
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)

Specifications:

  • Capacitance Ciss Typ: 140 pF
  • Continuous Drain Current Id: 2 A
  • Drain Source Voltage Vds: 60 V
  • Fall Time tf: 18 ns
  • Mounting Type: SMD
  • On State Resistance: 340 MOhm
  • Package / Case: MPT3
  • Power Dissipation Pd: 500 mW
  • Pulse Current Idm: 8 A
  • Rise Time: 10 ns
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 2.5 V
  • Transistor Case Style: MPT
  • Transistor Polarity: N Channel
  • Transistor Type: Protected MOSFET
  • Voltage Vds Typ: 60 V
  • Voltage Vgs Rds on Measurement: 4 V
  • Voltage Vgs th Max: 2.5 V
  • Voltage Vgs th Min: 1 V

RoHS: Y-Ex