Datasheet 2SK3569 - Toshiba MOSFET, N, 600 V, TO-220SIS — Ficha de datos

Toshiba 2SK3569

Part Number: 2SK3569

Descripción detallada

Manufacturer: Toshiba

Description: MOSFET, N, 600 V, TO-220SIS

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Docket:
2SK3569
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3569
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

  • Continuous Drain Current Id: 10 A
  • Current Id Max: 10 A
  • Drain Source Voltage Vds: 600 V
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • On State Resistance: 750 MOhm
  • Package / Case: TO-220SIS
  • Power Dissipation Pd: 45 W
  • Pulse Current Idm: 40 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: TO-220SIS
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - SK 145/37,5 STS-220
  • Fischer Elektronik - SK 409/25,4 STS
  • Fischer Elektronik - SK 409/50,8 STS