Datasheet Texas Instruments CSD16414Q5 — Ficha de datos

CSD16414Q5
www.ti.com SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16414Q5 FEATURES 1 2 PRODUCT SUMMARY Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5mm Г— 6mm Plastic Package VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain V
nC 4.4 RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage nC VGS = 4.5V 2.1 mΩ VGS = 10V 1.5 mΩ 1.6 V ORDERING INFORMATION
Device Package Media CSD16414Q5 SON 5 Г— 6 Plastic
Package 13-inch
reel APPLICATIONS 25
16.6 Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Synchronous FET Applications DESCRIPTION
The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S 1 8 D S 2 7 D S 3 6 D G 4 5 D Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +16 / –12 V Continuous Drain Current, TC = 25В°C 100 A Continuous Drain Current(1) 34 A IDM Pulsed Drain Current, TA = 25В°C(2) 213 A PD Power Dissipation(1) 3.2 W TJ, …