Datasheet SI7415DN-T1-GE3 - Vishay MOSFET, P, POWERPAK — Ficha de datos

Vishay SI7415DN-T1-GE3

Part Number: SI7415DN-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, P, POWERPAK

data sheetDownload Data Sheet

Docket:
Si7415DN
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 60 RDS(on) () 0.065 at VGS = - 10 V 0.110 at VGS = - 4.5 V ID (A) - 5.7 - 4.4

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 3.6 A
  • Current Id Max: 3.6 A
  • Current Temperature: 25°C
  • Device Marking: SI7415DN
  • Drain Source Voltage Vds: 60 V
  • External Depth: 5.15 mm
  • External Length / Height: 1.07 mm
  • External Width: 6.15 mm
  • Fall Time tf: 16 ns
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Junction to Case Thermal Resistance A: 1.9 °C/W
  • Mounting Type: SMD
  • Number of Pins: 8
  • On State Resistance Max: 65 MOhm
  • On State Resistance: 54 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • P Channel Gate Charge: 15nC
  • Package / Case: SOIC
  • Power Dissipation Pd: 1.5 W
  • Pulse Current Idm: 30 A
  • Rds(on) Test Voltage Vgs: -10 V
  • Rise Time: 12 ns
  • Threshold Voltage Vgs Typ: -3 V
  • Transistor Case Style: PowerPAK SO
  • Transistor Polarity: P Channel
  • Turn Off Time: 22 ns
  • Turn On Time: 12 ns
  • Voltage Vds Typ: -60 V
  • Voltage Vgs Max: -3 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Min: -1 V

RoHS: Yes

Accessories:

  • LICEFA - V11-7-6-10
  • LICEFA - V11-7
  • Roth Elektronik - RE932-01

Otros nombres:

SI7415DNT1GE3, SI7415DN T1 GE3