Datasheet SIR426DP-T1-GE3 - Vishay MOSFET, N CH, 40 V, 30 A, PPAK SO8 — Ficha de datos

Vishay SIR426DP-T1-GE3

Part Number: SIR426DP-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N CH, 40 V, 30 A, PPAK SO8

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Docket:
SiR426DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.0105 at VGS = 10 V 0.0125 at VGS = 4.5 V ID (A) 30a 30a Qg (Typ.) 9.3 nC

Specifications:

  • Current Id Max: 30 A
  • Drain Source Voltage Vds: 40 V
  • Number of Pins: 8
  • On State Resistance: 8.5 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 41.7 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Otros nombres:

SIR426DPT1GE3, SIR426DP T1 GE3