Datasheet SIS410DN-T1-GE3 - Vishay MOSFET, N-CH, 20 V, 35 A, POWERPAK8 — Ficha de datos
Part Number: SIS410DN-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, N-CH, 20 V, 35 A, POWERPAK8
Docket:
SiS410DN
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.0048 at VGS = 10 V 0.0063 at VGS = 4.5 V ID (A)a 35 12.7 nC 35 Qg (Typ.)
Specifications:
- Current Id Max: 35 A
- Drain Source Voltage Vds: 20 V
- Number of Pins: 8
- On State Resistance: 4 MOhm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 5.2 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: PowerPAK 1212
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Otros nombres:
SIS410DNT1GE3, SIS410DN T1 GE3