Datasheet SI2301BDS-T1-E3 - Vishay MOSFET, P, SOT-23 — Ficha de datos

Vishay SI2301BDS-T1-E3

Part Number: SI2301BDS-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, P, SOT-23

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Docket:
Si2301BDS
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.100 at VGS = - 4.5 V 0.150 at VGS = - 2.5 V ID (A)b - 2.4 - 2.0

Specifications:

  • Continuous Drain Current Id: -2.4 A
  • Current Id Max: -2.2 A
  • Device Marking: SI2301BDS
  • Drain Source Voltage Vds: -20 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 100 MOhm
  • Package / Case: SOT-23
  • Power Dissipation: 900 mW
  • Pulse Current Idm: 10 A
  • Rds(on) Test Voltage Vgs: -4.5 V
  • Threshold Voltage Vgs Typ: -950 mV
  • Transistor Case Style: SOT-23
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: -20 V
  • Voltage Vgs Max: -950 mV
  • Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes

Otros nombres:

SI2301BDST1E3, SI2301BDS T1 E3