Datasheet SQ2319ES-T1-GE3 - Vishay MOSFET, P CH, W DIODE, 40 V, 4.6 A, SOT-23 — Ficha de datos

Vishay SQ2319ES-T1-GE3

Part Number: SQ2319ES-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, P CH, W DIODE, 40 V, 4.6 A, SOT-23

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Docket:
New Product
SQ2319ES
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: -4.6 A
  • Drain Source Voltage Vds: -40 V
  • Number of Pins: 3
  • On State Resistance: 0.061 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 3 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Transistor Case Style: TO-236
  • Transistor Polarity: P Channel
  • Voltage Vgs Max: -20 V

RoHS: Yes

Otros nombres:

SQ2319EST1GE3, SQ2319ES T1 GE3