Datasheet SI2311DS-T1-E3 - Vishay P CHANNEL MOSFET, -8 V, 3 A, TO-236 — Ficha de datos

Vishay SI2311DS-T1-E3

Part Number: SI2311DS-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -8 V, 3 A, TO-236

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Docket:
Si2311DS
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) -8 RDS(on) () 0.045 at VGS = - 4.5 V 0.072 at VGS = - 2.5 V 0.120 at VGS = - 1.8 V ID (A) - 3.5 - 2.8 - 2.0

Specifications:

  • Continuous Drain Current Id: -3 A
  • Drain Source Voltage Vds: -8 V
  • On Resistance Rds(on): 45 MOhm
  • Rds(on) Test Voltage Vgs: -4.5 V
  • Threshold Voltage Vgs Typ: -800 mV
  • Transistor Polarity: P Channel

RoHS: Yes

Otros nombres:

SI2311DST1E3, SI2311DS T1 E3