Datasheet SIA419DJ-T1-GE3 - Vishay P CHANNEL MOSFET, -20 V, 12 A, SC-70 — Ficha de datos

Vishay SIA419DJ-T1-GE3

Part Number: SIA419DJ-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -20 V, 12 A, SC-70

data sheetDownload Data Sheet

Docket:
SiA419DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.030 at VGS = - 4.5 V 0.039 at VGS = - 2.5 V - 20 0.051 at VGS = - 1.8 V 0.066 at VGS = - 1.5 V 0.113 at VGS = - 1.2 V ID (A) - 12a - 12a - 12a - 12

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: -12 A
  • Drain Source Voltage Vds: -20 V
  • On Resistance Rds(on): 113 MOhm
  • Rds(on) Test Voltage Vgs: 5 V
  • Threshold Voltage Vgs Typ: -1 V
  • Transistor Polarity: P Channel

RoHS: Yes

Otros nombres:

SIA419DJT1GE3, SIA419DJ T1 GE3