Datasheet SI2308BDS-T1-GE3 - Vishay MOSFET, N CH, 60 V, 2.3 A, SOT23-3 — Ficha de datos

Vishay SI2308BDS-T1-GE3

Part Number: SI2308BDS-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N CH, 60 V, 2.3 A, SOT23-3

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Docket:
New Product
Si2308BDS
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Current Id Max: 1.9 A
  • Drain Source Voltage Vds: 60 V
  • Number of Pins: 3
  • On State Resistance: 130 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 1.09 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

  • CHEMTRONICS - CW8400
  • MULTICORE (SOLDER) - 698840
  • Roth Elektronik - RE901

Otros nombres:

SI2308BDST1GE3, SI2308BDS T1 GE3