Datasheet SIS892DN-T1-GE3 - Vishay MOSFET, N CH, DIODE, 100 V, 30 A, PPAK12128 — Ficha de datos

Vishay SIS892DN-T1-GE3

Part Number: SIS892DN-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 100 V, 30 A, PPAK12128

data sheetDownload Data Sheet

Docket:
SiS892DN
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.029 at VGS = 10 V 0.042 at VGS = 4.5 V ID (A)f 30g 25 Qg (Typ.) 6.7 nC

Specifications:

  • Current Id Max: 8 A
  • Drain Source Voltage Vds: 100 V
  • Number of Pins: 8
  • On State Resistance: 0.024 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 3.7 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: PowerPAK 1212
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • Electrolube - SMA10SL

Otros nombres:

SIS892DNT1GE3, SIS892DN T1 GE3