Datasheet SQD50N04-4M5L-GE3 - Vishay MOSFET, N CH, W DIODE, 40 V, 50 A, TO-252 — Ficha de datos
Part Number: SQD50N04-4M5L-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, N CH, W DIODE, 40 V, 50 A, TO-252
Docket:
SQD50N04-4m5L
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 40 0.0045 0.006 50 Single
Specifications:
- Continuous Drain Current Id: 50 A
- Drain Source Voltage Vds: 40 V
- Number of Pins: 3
- On State Resistance: 0.003 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 136 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-252
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Otros nombres:
SQD50N044M5LGE3, SQD50N04 4M5L GE3