Datasheet SQM40N10-30-GE3 - Vishay MOSFET, N CH, W DIODE, 100 V, 40 A, TO-263 — Ficha de datos

Vishay SQM40N10-30-GE3

Part Number: SQM40N10-30-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N CH, W DIODE, 100 V, 40 A, TO-263

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Docket:
SQM40N10-30
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 6.0 V ID (A) Configuration 100 0.030 0.034 40 Single

Specifications:

  • Continuous Drain Current Id: 40 A
  • Drain Source Voltage Vds: 100 V
  • Number of Pins: 3
  • On State Resistance: 0.023 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 107 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Otros nombres:

SQM40N1030GE3, SQM40N10 30 GE3