Datasheet SI2318DS-T1-GE3 - Vishay N CH MOSFET — Ficha de datos

Vishay SI2318DS-T1-GE3

Part Number: SI2318DS-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: N CH MOSFET

Specifications:

  • Continuous Drain Current Id: 3 A
  • Drain Source Voltage Vds: 40 V
  • On Resistance Rds(on): 36 MOhm
  • Power Dissipation Pd: 750 mW
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Polarity: N Channel

RoHS: Yes

Otros nombres:

SI2318DST1GE3, SI2318DS T1 GE3