Datasheet SI3430DV-T1-GE3 - Vishay N CH MOSFET — Ficha de datos

Vishay SI3430DV-T1-GE3

Part Number: SI3430DV-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: N CH MOSFET

Specifications:

  • Continuous Drain Current Id: 2.4 A
  • Drain Source Voltage Vds: 100 V
  • On Resistance Rds(on): 170 MOhm
  • Power Dissipation Pd: 2 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2 V
  • Transistor Polarity: N Channel

RoHS: Yes

Otros nombres:

SI3430DVT1GE3, SI3430DV T1 GE3