Datasheet SI1050X-T1-E3 - Vishay MOSFET, N, SC-89 — Ficha de datos

Vishay SI1050X-T1-E3

Part Number: SI1050X-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N, SC-89

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Specifications:

  • Base Number: 1050
  • Continuous Drain Current Id: 1.3 A
  • Drain Source Voltage Vds: 8 V
  • Mounting Type: SMD
  • N-channel Gate Charge: 7.1nC
  • Number of Pins: 6
  • On Resistance Rds(on): 86 MOhm
  • On State Resistance @ Vgs = 1.8V: 102 MOhm
  • On State Resistance @ Vgs = 2.5V: 93 MOhm
  • On State Resistance @ Vgs = 4.5V: 86 MOhm
  • Package / Case: SC-89
  • Power Dissipation Pd: 236 mW
  • Pulse Current Idm: 6 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Threshold Voltage Vgs Typ: 900 mV
  • Transistor Case Style: SC-89
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 8 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Max: 0.9 V
  • Voltage Vgs th Min: 0.35 V

RoHS: Yes

Otros nombres:

SI1050XT1E3, SI1050X T1 E3