Datasheet SIE802DF-T1-E3 - Vishay MOSFET, N, POLAR PAK — Ficha de datos

Vishay SIE802DF-T1-E3

Part Number: SIE802DF-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N, POLAR PAK

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Specifications:

  • Base Number: 802
  • Continuous Drain Current Id: 202 A
  • Current Id Max: 60 A
  • Drain Source Voltage Vds: 30 V
  • Mounting Type: SMD
  • N-channel Gate Charge: 50nC
  • Number of Pins: 10
  • On Resistance Rds(on): 1.9 MOhm
  • On State Resistance @ Vgs = 4.5V: 2.6 MOhm
  • On State resistance @ Vgs = 10V: 1.9 MOhm
  • Package / Case: PolarPAK
  • Power Dissipation Pd: 125 W
  • Pulse Current Idm: 100 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2.2 V
  • Transistor Case Style: PolarPAK
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 2.2 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 3.7 V
  • Voltage Vgs th Min: 1.5 V

RoHS: Yes

Otros nombres:

SIE802DFT1E3, SIE802DF T1 E3