Datasheet CMF20120D - Cree MOSFET, SIC, N CH, 1200 V, 33 A, TO247 — Ficha de datos

Cree CMF20120D

Part Number: CMF20120D

Descripción detallada

Manufacturer: Cree

Description: MOSFET, SIC, N CH, 1200 V, 33 A, TO247

data sheetDownload Data Sheet

Application NoteApplication Note

Docket:
Application Considerations for SiC MOSFETs
January 2011
Application Considerations for Silicon Carbide MOSFETs
Application Considerations for Silicon Carbide MOSFETs
Author: Bob Callanan, Cree, Inc.

Specifications:

  • Current Id Max: 33 A
  • Drain Source Voltage Vds: 1.2 kV
  • Number of Pins: 3
  • On Resistance Rds(on): 80 MOhm
  • Operating Temperature Range: -55°C to +125°C
  • Power Dissipation: 150 W
  • Rds(on) Test Voltage Vgs: 20 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 25 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 243 MI 247 H
  • IXYS RF - DEIC420
  • WAKEFIELD SOLUTIONS - 120-5.